Flash - S29AL016M90TAIR2

$3.72

Part Number:  IT-IM130329040
Brand:  ITEAD Australia

Overview The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supply for both read and write functions, designed...
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Overview

The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt V CC supply. The device can also be programmed in standard EPROM programmers.

The device offers access times of 90 and 100 ns. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

The device is entirely command set compatible with the JEDEC single-power-supply Flash standard . Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Device programming and erasure are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/ Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.

Hardware data protection measures include a low V CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation.

The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.

The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time.

The SecSi™ (Secured Silicon) Sector provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur.

MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.